| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD15N60DM6 is an N-Channel MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage of 600V and a continuous drain current of 12A at case temperature. The device has a maximum on-resistance of 338mOhm at 6A and 10V gate drive, making it suitable for power switching applications.
Key electrical characteristics include a maximum gate charge of 15.3nC at 10V and an input capacitance of 607pF at 100V drain-source voltage. The gate threshold voltage is 4.75V maximum at 250µA drain current. The device can dissipate up to 110W at case temperature.
The MOSFET is housed in a DPAK surface-mount package, suitable for automated assembly. It is designed for applications requiring high voltage switching with moderate current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
12A at case temperature.
338mOhm at 6A drain current and 10V gate-source voltage.
15.3nC maximum at 10V gate-source voltage.
607pF maximum at 100V drain-source voltage.
110W at case temperature.
4.75V maximum at 250µA drain current.