| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | 1136 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD150NH02LT4 is an N-Channel Power MOSFET utilizing ST's proprietary STripFET III technology. It is designed for high-efficiency applications, particularly in high-performance DC-DC converters requiring very high output currents.
Key electrical specifications include a drain-source voltage (Vdss) of 24V and a maximum continuous drain current of 150A at 25°C case temperature. The on-resistance (Rds On) is rated at a maximum of 3.5mOhm at 75A and 10V gate-source voltage. It features a low threshold voltage of 1.8V and a gate charge of 93nC at 10V.
This MOSFET has a maximum power dissipation of 125W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. The component is housed in a TO-252-3, DPAK package, suitable for surface mounting.
Applications include general switching applications where high efficiency and reduced conduction and switching losses are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24V.
150A at TC=25°C and 107A at TC=100°C.
Maximum 3.5 mOhm at 75A and 10V gate drive (typical 3 mOhm).
Maximum 1.8V at 250µA.
-55°C to 175°C.
DPAK (TO-252) surface-mount package.