| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
142 pcs
|
142 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD14NM50N is an N-channel Power MOSFET utilizing MDmesh™ II technology. This device is engineered for demanding high efficiency converter applications, offering a balance of low on-resistance and low gate charge.
Key electrical specifications include a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 12A at 25°C. The on-resistance (Rds(on)) is a maximum of 320mOhm at 6A and 10V gate drive. The input capacitance (Ciss) is 816pF at 50V, and the gate charge (Qg) is a maximum of 27nC at 10V.
This MOSFET operates at a maximum junction temperature of 150°C and has a power dissipation of 90W at 25°C. It is packaged in a D2PAK surface-mount package, suitable for various power electronic designs. The device is 100% avalanche tested, indicating robust performance under transient overcurrent conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 500V.
It is available in a DPAK (TO-252-3) surface-mount package.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at 100µA.
The maximum gate charge (Qg) is 27nC at Vgs=10V.
The single pulse avalanche energy (EAS) is 172mJ at starting Tj=25°C.
The maximum thermal resistance junction-to-case (Rthj-case) is 1.39°C/W.