| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from STMicroelectronics, part number STD13NM60ND, is designed for efficient power management.
Key electrical characteristics include a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 11A at a case temperature (Tc). The on-resistance (Rds On) is specified as a maximum of 380mOhm at 5.5A and 10V gate-source voltage. The gate charge (Qg) is 24.5nC maximum at 10V, and the input capacitance (Ciss) is 845pF maximum at 50V.
The device operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 109W (Tc). The gate threshold voltage (Vgs(th)) is 5V maximum at 250µA, and the maximum gate-source voltage is ±25V.
Packaged in a surface-mount DPAK (TO-252-3, SC-63) format, this MOSFET is suitable for various power electronics designs requiring robust performance and a compact footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current is 11A.
The maximum Rds On is 380mOhm at 5.5A and 10V.
The package type is TO-252-3, DPak (2 Leads + Tab), SC-63.
The operating temperature is up to 150°C.