| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,391 pcs
|
6391 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,751 pcs
|
1751 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The STMicroelectronics STD13NM60N is an N-channel Power MOSFET featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 11A. This device utilizes MDmesh II technology for efficient power handling.
Key electrical characteristics include a maximum on-resistance of 360mΩ at 5.5A and 10V gate drive, with a threshold voltage of 4V maximum. Input capacitance is rated at 790pF, and gate charge is a maximum of 30nC.
Designed for surface mounting, the STD13NM60N comes in a DPAK (TO-252) package. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 90W.
This MOSFET is suitable for various power switching applications where high voltage and moderate current handling are required. Its EOL (End-of-Life) status indicates that new product orders are no longer accepted, with a Last Time Buy date of September 2026.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63).
-55°C to 150°C (junction temperature).
11 A at Tc.
360 mΩ at 5.5A, 10V.
30 nC at 10V.
End of Life (EOL) with Last Time Buy date 2026-09-10.