STD13N65M2 The STMicroelectronics STD13N65M2 is an N-Channel MOSFET designed for 650V operation with a continuous drain current of 10A. It features a surface mountable DPAK package.
Mfr Part #:

STD13N65M2

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD13N65M2 is an N-Channel MOSFET designed for 650V operation with a continuous drain current of 10A. It features a surface mountable DPAK package.
✓ Total Stock: 42,869 pcs
$ Price Range: $2.56

STD13N65M2 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
36,020 pcs
36020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,349 pcs
4349 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

STD13N65M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD13N65M2 Description

Short technical summary and product information.

The STMicroelectronics STD13N65M2 is a high-performance N-Channel MOSFET. It is rated for a drain-source voltage (Vdss) of 650V and can handle a continuous drain current of 10A (Tc). The MOSFET exhibits a low on-state resistance (Rds On) of 430mOhm at 5A and 10V, with a maximum gate charge (Qg) of 17nC at 10V.

 

Designed for efficient power switching, this device operates at temperatures up to 150°C (TJ). Its input capacitance (Ciss) is 590pF at 100V. The MOSFET is constructed using MOSFET (Metal Oxide) technology and is suitable for various power applications.

 

Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 format, the STD13N65M2 is designed for surface mounting. It offers a maximum gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The maximum power dissipation is rated at 110W (Tc).

STD13N65M2 Quick Information

Product Type: MOSFET
Canonical Name: STD13N65M2 N-Channel MOSFET
Subcategory: N-Channel

STD13N65M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD13N65M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD13N65M2 Features

  • 650V Drain to Source Voltage (Vdss)
  • 10A Continuous Drain Current
  • 430mOhm Max Rds On @ 5A, 10V
  • 17nC Max Gate Charge @ 10V
  • Surface Mount DPAK Package

STD13N65M2 Applications

  • Suitable for switched-mode power supplies.
  • Used in power factor correction circuits.
  • Applicable in high-frequency DC-DC converters.
  • Ideal for LED lighting power stages.
  • Used in AC-DC adapter designs.

STD13N65M2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STD13N65M2?

The maximum drain-source voltage is 650V.

What is the package type of the STD13N65M2?

The device is offered in a DPAK (TO-252-3) surface mount package.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

What is the on-resistance of the STD13N65M2?

The maximum on-resistance is 430 mOhm at 5A drain current and 10V gate voltage.

What is the gate charge of the STD13N65M2?

The maximum gate charge is 17 nC at 10V gate voltage.

What is the input capacitance of the STD13N65M2?

The maximum input capacitance is 590 pF at 100V drain-source voltage.

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