| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,020 pcs
|
36020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,349 pcs
|
4349 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD13N65M2 is a high-performance N-Channel MOSFET. It is rated for a drain-source voltage (Vdss) of 650V and can handle a continuous drain current of 10A (Tc). The MOSFET exhibits a low on-state resistance (Rds On) of 430mOhm at 5A and 10V, with a maximum gate charge (Qg) of 17nC at 10V.
Designed for efficient power switching, this device operates at temperatures up to 150°C (TJ). Its input capacitance (Ciss) is 590pF at 100V. The MOSFET is constructed using MOSFET (Metal Oxide) technology and is suitable for various power applications.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 format, the STD13N65M2 is designed for surface mounting. It offers a maximum gate-source voltage (Vgs) of ±25V and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The maximum power dissipation is rated at 110W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650V.
The device is offered in a DPAK (TO-252-3) surface mount package.
The maximum operating junction temperature is 150°C.
The maximum on-resistance is 430 mOhm at 5A drain current and 10V gate voltage.
The maximum gate charge is 17 nC at 10V gate voltage.
The maximum input capacitance is 590 pF at 100V drain-source voltage.