| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,713 pcs
|
3713 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD12NF06LT4 is an N-Channel enhancement mode MOSFET from STMicroelectronics, designed for medium power switching applications. It features a maximum drain-source voltage of 60V and continuous drain current of 12A at case temperature. The device achieves a low on-resistance of 100mOhm (maximum) when driven with 10V gate voltage, making it suitable for efficient power management. The gate threshold voltage is 2V maximum at 250µA drain current, allowing logic-level drive compatibility.
The MOSFET is housed in a DPAK (TO-252) surface-mount package, offering a compact footprint for space-constrained designs. It supports a wide operating junction temperature range of -55°C to 175°C, with a maximum power dissipation of 42.8W at case temperature. The device incorporates advanced STripFET technology for improved switching performance and reduced gate charge.
Typical applications include DC-DC converters, load switches, and power supply circuits in industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 12A at case temperature (Tc).
The maximum on-resistance is 100mOhm at 6A drain current and 10V gate drive.
It is available in a DPAK (TO-252) surface mount package.
The operating junction temperature range is -55°C to 175°C.
The maximum gate threshold voltage is 2V at 250µA drain current.
The maximum input capacitance (Ciss) is 350pF at 25V drain-source voltage.