STD12N60DM6 The STMicroelectronics STD12N60DM6 is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-source voltage and a 10A current rating.
Mfr Part #:

STD12N60DM6

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD12N60DM6 is an N-Channel MOSFET designed for power switching applications. It features a 600V drain-source voltage and a 10A current rating.
✓ Total Stock: 2,500 pcs
$ Price Range: $2.56

STD12N60DM6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

STD12N60DM6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD12N60DM6 Description

Short technical summary and product information.

The STMicroelectronics STD12N60DM6 is a single N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 10A (Tc). It offers a low on-resistance (Rds On) of 390mOhm at 5A and 10V Vgs, and a gate charge (Qg) of 17nC at 10V Vgs. The MOSFET operates at temperatures ranging from -55°C to 150°C (TJ) and has a maximum power dissipation of 90W (Tc).

 

This device utilizes MOSFET (Metal Oxide) technology and is housed in a Surface Mount D-PAK (TO-252) package. Its input capacitance (Ciss) is 508pF at 100V Vds, and the gate threshold voltage (Vgs(th)) is 4.75V at 250µA Id. The maximum gate-source voltage is ±25V.

 

The STD12N60DM6 is suitable for various power electronics applications requiring efficient switching and high voltage handling capabilities. Its surface-mount package facilitates integration into compact designs.

STD12N60DM6 Quick Information

Product Type: MOSFET
Canonical Name: STD12N60DM6 N-Channel MOSFET
Subcategory: Single

STD12N60DM6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD12N60DM6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD12N60DM6 Features

  • 600V drain-to-source voltage.
  • 10A continuous drain current.
  • 390mOhm maximum on-resistance.
  • Surface mount D-PAK package.
  • N-Channel MOSFET technology.

STD12N60DM6 Applications

  • Used in switch-mode power supplies.
  • Ideal for power factor correction circuits.
  • Suitable for lighting ballast applications.
  • Applicable in AC-DC adapters.

STD12N60DM6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STD12N60DM6?

The maximum drain-source voltage is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 10A at case temperature.

What is the on-resistance of the STD12N60DM6?

The on-resistance is 390mOhm maximum at 5A drain current and 10V gate voltage.

What is the gate charge of the STD12N60DM6?

The gate charge is 17nC at 10V gate voltage.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the STD12N60DM6 come in?

The device is available in a TO-252-3, DPAK (2 leads + tab), SC-63 surface mount package. The supplier package is D-PAK (TO-252).

What is the gate threshold voltage of the STD12N60DM6?

The gate threshold voltage is 4.75V maximum at 250µA drain current.

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