| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD12N60DM2AG from STMicroelectronics is an N-Channel MOSFET with an automotive-grade designation. It is rated for a Drain to Source Voltage (Vdss) of 600V and can handle a continuous drain current of up to 10A (Tc). The MOSFET exhibits a maximum On-Resistance (Rds On) of 430mOhm at 5A and 10V.
This component is designed for surface mounting, utilizing a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a Gate Charge (Qg) of 14.5 nC at 10V and an Input Capacitance (Ciss) of 614 pF at 100V. The Gate Threshold Voltage (Vgs(th)) is a maximum of 5V at 250µA, with a maximum Gate to Source Voltage (Vgs) of ±25V.
This MOSFET utilizes Metal Oxide technology and is suitable for various power switching applications where high voltage and moderate current handling are required. Its automotive-grade qualification suggests suitability for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage is 600 V.
The MOSFET comes in a TO-252-3, DPAk (2 Leads + Tab), SC-63 surface mount package, with a supplier device package of D-PAK (TO-252).
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 10A at case temperature.
Maximum on-resistance is 430 mOhm at drain current of 5A and gate-to-source voltage of 10V.
Maximum gate threshold voltage is 5V at a drain current of 250µA.
Maximum power dissipation is 110W at case temperature.