| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD120N4LF6 is an N-Channel MOSFET with a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at a case temperature. It features a low on-resistance (Rds On) of 4 mOhm at 40A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 3V at 250µA.
This MOSFET is constructed using MOSFET (Metal Oxide) technology and operates within a temperature range of -55°C to 175°C (TJ). It has a gate-to-source voltage (Vgs) limit of ±20V and a maximum power dissipation of 110W (Tc).
The STD120N4LF6 is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, with the supplier device package specified as DPAK. Its input capacitance (Ciss) is 4300 pF at 25V, and gate charge (Qg) is 80 nC at 10V.
This component is suitable for various power switching and control applications where high current and low on-resistance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-252-3, DPAK (2 Leads + Tab), SC-63; surface-mount.
-55°C to 175°C (junction temperature).
4mOhm at 40A and 10V gate voltage.
80nC at 10V.
80A (case temperature).