| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,232 pcs
|
1232 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD120N4F6 is a high-performance N-Channel MOSFET. It is designed with a 40V drain-to-source voltage (Vdss) and can handle a continuous drain current of 80A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 4mOhm at 40A and 10V gate drive voltage, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is rated at a maximum of 3850 pF at 25V, and the gate charge (Qg) is 65 nC maximum at 10V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 110W (Tc). It utilizes Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology.
The STD120N4F6 is packaged in a surface-mount DPAK (TO-252-3) package, making it suitable for various electronic designs requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
Surface mount DPAK (TO-252-3, DPak with tab).
-55°C to 175°C (junction).
80A.
4mOhm at 40A and 10V gate drive.
4V maximum at 250µA.
110W.