STD11NM65N The STMicroelectronics STD11NM65N is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and 11A continuous current.
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STD11NM65N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD11NM65N is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and 11A continuous current.
✓ Total Stock: 2,500 pcs
$ Price Range: $2.56

STD11NM65N Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

STD11NM65N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD11NM65N Description

Short technical summary and product information.

This STMicroelectronics STD11NM65N is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-source voltage (Vdss) of 650V and a continuous drain current of 11A at a case temperature (Tc).

 

The MOSFET has a low on-state resistance (Rds On) of 455mOhm at 5.5A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 29nC and an input capacitance (Ciss) of 800pF. The gate-source voltage (Vgs) maximum is ±25V, with a threshold voltage (Vgs(th)) of 4V at 250µA.

 

Designed for surface mounting, the component comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 110W (Tc).

 

The STD11NM65N is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. This MOSFET is suitable for various power switching applications where high voltage and moderate current handling are required.

STD11NM65N Quick Information

Product Type: MOSFET
Canonical Name: STD11NM65N N-Channel MOSFET
Subcategory: N-Channel

STD11NM65N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD11NM65N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD11NM65N Features

  • N-Channel MOSFET with 650V drain-source voltage.
  • Continuous drain current of 11A.
  • Low Rds On of 455mOhm at 5.5A, 10V.
  • Surface mount DPAK package.
  • Operates up to 150°C.

STD11NM65N Applications

  • Suitable for power switching circuits.
  • Used in high voltage applications.
  • Ideal for moderate current needs.
  • Power supply designs.
  • Motor control applications.

STD11NM65N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STD11NM65N?

The maximum drain-source voltage (Vdss) is 650V.

What is the continuous drain current rating?

The continuous drain current is 11A at the case temperature.

What is the on-state resistance (Rds On) of this MOSFET?

The Rds On is a maximum of 455mOhm when measured at 5.5A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is up to 150°C (TJ).

What package type is the STD11NM65N supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

Is the STD11NM65N RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

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