| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STD11NM60ND is an N-Channel MOSFET with a 600V drain-source voltage rating and a continuous drain current of 10A at 25°C. This device utilizes MOSFET (Metal Oxide) technology and has an on-resistance of 450mOhm at 5A and 10V.
Key electrical characteristics include a gate-source voltage range of ±25V and a gate threshold voltage of 5V at 250µA. The input capacitance is rated at 850pF at 50V, and the gate charge is a maximum of 30nC at 10V. The MOSFET has a maximum power dissipation of 90W and an operating temperature range of -55°C to 150°C.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the STD11NM60ND is suitable for various switching applications. Its mounting type is surface mount, and it features gull wing terminals.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the STD11NM60ND is 600V.
The continuous drain current (Id) for the STD11NM60ND is 10A at 25°C.
The maximum on-resistance (Rds On) for the STD11NM60ND is 450mOhm at 5A and 10V.
The operating temperature range (TJ) for the STD11NM60ND is 150°C.
The STD11NM60ND is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The STD11NM60ND is a surface mount device.