| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
325 pcs
|
325 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD11NM50N is an N-channel Power MOSFET from the MDmesh™ II series, designed for demanding high efficiency converters and switching applications. It offers a 500V drain-source voltage and a continuous drain current of 8.5A at 25°C.
Key electrical characteristics include a maximum on-resistance of 470mOhm at 4.5A and 10V gate drive, a gate threshold voltage of 4V, and a gate charge of 19 nC at 10V. The input capacitance is rated at a maximum of 547 pF at 50V.
This MOSFET is housed in a surface-mount DPAK package (TO-252-3, SC-63). It operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 70W at 25°C.
The device is suitable for applications requiring high efficiency and robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 500 V.
The continuous drain current is 8.5 A at 25°C.
The maximum on-resistance (Rds On) is 470 mOhm at 4.5A and 10V.
The maximum operating junction temperature is 150°C.
The STD11NM50N is available in a surface mount DPAK package.