| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD11N65M2 is a high-performance N-Channel Power MOSFET from the Mdmesh M2 series. It is designed for demanding power applications, offering a robust 650V drain-source breakdown voltage and a continuous drain current capability of 7A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 670mOhm at 3.5A and 10V, a gate-source threshold voltage (Vgs(th)) of 4V at 250µA, and a maximum gate-source voltage of ±25V. The MOSFET also features a gate charge (Qg) of 12.5nC at 10V and an input capacitance (Ciss) of 410pF at 100V.
With a maximum power dissipation of 85W (Tc) and an operating temperature range of -55°C to 150°C, this device is suitable for various power conversion and management systems. The MOSFET utilizes Silicon technology and is packaged in a TO-252-3, DPak surface mount package, supplied on a reel with a standard quantity of 2500 units.
This component is well-suited for applications requiring efficient power switching and high voltage handling. Its surface mountable design facilitates integration into compact electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 650 V.
The continuous drain current is 7 A.
The Rds On is a maximum of 670 mOhm at 3.5A and 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The standard package quantity is 2500 units.