STD11N60M6 The STMicroelectronics STD11N60M6 is an N-Channel MOSFET designed for discrete applications. It features a 600V drain-to-source voltage and an 8A continuous drain current.
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STD11N60M6

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD11N60M6 is an N-Channel MOSFET designed for discrete applications. It features a 600V drain-to-source voltage and an 8A continuous drain current.
✓ Total Stock: 5,000 pcs
$ Price Range: $2.56

STD11N60M6 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 20+ On Request On Request

STD11N60M6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD11N60M6 Description

Short technical summary and product information.

The STMicroelectronics STD11N60M6 is a single N-Channel MOSFET belonging to the discrete semiconductor product category. This device is built using MOSFET (Metal Oxide) technology and offers a drain-to-source voltage (Vdss) of 600V.

 

Key electrical characteristics include a maximum continuous drain current of 8A (Tc) and a maximum power dissipation of 90W (Tc). The Rds On is specified at a maximum of 520mOhm at 4A and 10V gate drive. The gate charge (Qg) is 10.3 nC maximum at 10V, and the gate threshold voltage (Vgs(th)) is 4.75V maximum at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a Surface Mount package, specifically the TO-252-3, DPak (2 Leads + Tab), SC-63, also known as D-PAK (TO-252).

 

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted with low confidence due to lack of verification.

STD11N60M6 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STD11N60M6 N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

STD11N60M6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD11N60M6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD11N60M6 Features

  • 600V Drain-to-Source Voltage (Vdss)
  • 8A Continuous Drain Current (Tc)
  • 520mOhm Max Rds On @ 4A, 10V
  • Surface Mount D-PAK (TO-252) Package
  • Operating Temperature -55°C to 150°C

STD11N60M6 Applications

  • General purpose power switching
  • Power supply circuits
  • Motor control applications
  • DC-DC converters

STD11N60M6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) of the STD11N60M6?

The maximum drain-to-source voltage (Vdss) is 600V.

What package does the STD11N60M6 come in?

The STD11N60M6 is available in a TO-252-3 (DPak) surface-mount package.

What is the operating temperature range of the STD11N60M6?

The operating junction temperature range is -55°C to 150°C.

What is the maximum gate charge (Qg) of the STD11N60M6?

The maximum gate charge (Qg) at Vgs=10V is 10.3 nC.

What is the on-resistance (Rds(on)) of the STD11N60M6?

The maximum on-resistance (Rds(on)) at Id=4A and Vgs=10V is 520 mOhm.

What is the continuous drain current rating of the STD11N60M6?

The continuous drain current (at case temperature) is 8A.

What is the maximum power dissipation of the STD11N60M6?

The maximum power dissipation at case temperature is 90W.

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