STD11N60DM2 STD11N60DM2 is an N-Channel MOSFET from STMicroelectronics with a maximum drain-to-source voltage of 650V and continuous drain current of 10A. It is housed in a DPAK surface mount package.
Mfr Part #:

STD11N60DM2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STD11N60DM2 is an N-Channel MOSFET from STMicroelectronics with a maximum drain-to-source voltage of 650V and continuous drain current of 10A. It is housed in a DPAK surface mount package.
✓ Total Stock: 41,020 pcs
$ Price Range: $2.56

STD11N60DM2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
35,000 pcs
35000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,020 pcs
6020 pcs On Request 1 On Request On Request On Request On Request On Request

STD11N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD11N60DM2 Description

Short technical summary and product information.

The STD11N60DM2 is an N-Channel power MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage (Vdss) of 650V and a continuous drain current of 10A at case temperature (Tc). The device offers a low on-resistance of 420mOhm maximum at 5A drain current and 10V gate drive, enabling efficient power switching.

 

This MOSFET is designed for high-voltage switching applications. It has a maximum power dissipation of 110W at Tc and operates over a junction temperature range of -55°C to 150°C. The gate threshold voltage is 5V maximum at 250µA drain current, and the maximum gate-source voltage is ±25V. The device exhibits a typical gate charge of 16.5nC at 10V and an input capacitance of 614pF at 100V drain-source voltage.

 

The STD11N60DM2 is supplied in a TO-252-3 (DPak) surface mount package, suitable for automated assembly processes. It is RoHS3 compliant and has a moisture sensitivity level (MSL) of 1 (unlimited).

STD11N60DM2 Quick Information

Product Type: MOSFET
Canonical Name: STD11N60DM2 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

STD11N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD11N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD11N60DM2 Features

  • 650V maximum drain-to-source voltage.
  • 10A continuous drain current at Tc.
  • 420mOhm maximum on-resistance at 5A, 10V.
  • 110W maximum power dissipation at Tc.
  • Surface mount DPAK package.

STD11N60DM2 Applications

  • High-voltage DC-DC converters.
  • Power factor correction circuits.
  • Switching power supplies.
  • Motor control inverters.

STD11N60DM2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STD11N60DM2?

The maximum drain-to-source voltage (Vdss) is 650V.

What is the continuous drain current rating of the STD11N60DM2?

The maximum continuous drain current is 10A at case temperature (Tc).

What is the on-resistance of the STD11N60DM2?

The maximum on-resistance (Rds(on)) is 420mOhm at a drain current of 5A and gate-source voltage of 10V.

What is the operating temperature range of the STD11N60DM2?

The operating junction temperature range is -55°C to 150°C.

What package is the STD11N60DM2 available in?

The STD11N60DM2 is available in a TO-252-3 (DPak) surface mount package.

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