| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD11N50M2 is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 8A at 25°C case temperature. It offers a low on-resistance (Rds On) of 530mOhm at 4A, 10V gate-source voltage, and a gate charge (Qg) of 12nC at 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor technology and is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. The operating temperature range is -55°C to 150°C (TJ). It is suitable for various power electronics applications requiring high voltage and current handling capabilities.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-source voltage (Vgs) of ±25V. The maximum power dissipation is 85W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V maximum.
TO-252-3 (DPAK) surface mount package.
-55°C to 150°C junction temperature.
4V maximum at 250µA drain current.
±25V.
530mΩ maximum at 4A drain current and 10V gate drive.
12nC maximum at 10V gate-source voltage.