| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 328 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD110NH02LT4 is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for power applications, offering a drain-to-source voltage (Vdss) of 24V and a continuous drain current of 80A at a case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 5mOhm at 40A and 10V Vgs, and a gate charge (Qg) of 93nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is 1V at 250µA, with a maximum gate-source voltage of ±20V.
This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 125W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24 V.
80 A at case temperature.
Maximum 5 mOhm at 40 A and 10 V gate drive.
1 V at 250 µA drain current.
125 W at case temperature.
TO-252-3 (DPAK) surface-mount package.
-55°C to 175°C (junction temperature).