| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD110N8F6 is a high-performance N-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vdss) of 80V and can handle a continuous drain current (Id) of up to 80A. The MOSFET exhibits a low on-resistance (Rds On) of 6.5mOhm at a drain current of 40A and gate-source voltage of 10V, contributing to efficient power transfer and reduced heat generation.
This device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 167W (Tc). The gate charge (Qg) is 150 nC at 10V, and the input capacitance (Ciss) is 9130 pF at 40V. The gate threshold voltage (Vgs(th)) is 4.5V at 250µA.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the STD110N8F6 is suitable for various electronic designs requiring robust power handling capabilities. Its N-Channel configuration and Metal Oxide technology make it a versatile component for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
80A at Tc.
6.5mOhm at 40A, 10V.
-55°C to 175°C (junction).
4.5V at 250µA.
DPAK (TO-252-3).
Surface mount.