| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD10NM60ND is an N-Channel MOSFET with a 600V drain-to-source voltage rating and 8A continuous current capability. This device utilizes MOSFET technology and is housed in a Surface Mount DPAK package (TO-252-3, SC-63).
Key electrical characteristics include a maximum on-resistance of 600mOhm at 4A and 10V, a gate charge of 20nC at 10V, and an input capacitance of 577pF at 50V. The gate-source voltage has a maximum rating of ±25V, with a gate threshold voltage of 5V at 250µA.
Operating at temperatures between -55°C and 150°C, this MOSFET is suitable for various power management applications. Its Surface Mount DPAK packaging facilitates integration into compact designs.
This component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. It is designed for applications requiring efficient power switching and control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) for the STD10NM60ND is 600V.
The STD10NM60ND has a continuous drain current of 8A.
The maximum Rds On for the STD10NM60ND is 600mOhm when tested at 4A and 10V.
The STD10NM60ND is a Surface Mount device.
The operating temperature range for the STD10NM60ND is -55°C to 150°C.