STD10NM60N The STMicroelectronics STD10NM60N is an N-channel Power MOSFET designed for high-voltage applications. It offers a 600V breakdown voltage and 8A continuous drain current.
Mfr Part #:

STD10NM60N

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD10NM60N is an N-channel Power MOSFET designed for high-voltage applications. It offers a 600V breakdown voltage and 8A continuous drain current.
✓ Total Stock: 32,433 pcs
$ Price Range: $2.56

STD10NM60N Available from 4 distributors

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25,639 pcs
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2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
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1,794 pcs
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STD10NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Number of Elements
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Resistance
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD10NM60N Description

Short technical summary and product information.

The STMicroelectronics STD10NM60N is a high-performance N-channel Power MOSFET from the MDmesh II family. It features a Drain to Source Breakdown Voltage of 600V and a Continuous Drain Current of 8A (Tc), with a maximum power dissipation of 70W (Tc).

 

This MOSFET is designed for efficient power switching applications. Key electrical characteristics include a low Rds On of 550mOhm (Max) @ 4A, 10V, and a Gate to Source Voltage (Vgs) of ±25V. It also has an Input Capacitance (Ciss) of 540 pF @ 50V and a Gate Charge (Qg) of 19 nC @ 10V.

 

The STD10NM60N operates within a temperature range of -55°C to 150°C. It is housed in a DPAK (TO-252-3) surface mount package, making it suitable for compact designs. The component is specified with a rise time of 12ns and a fall time of 15ns, with turn-on and turn-off delay times of 10ns and 32ns respectively.

 

Environmental compliance includes RoHS3 compliance and Lead Free status. The Moisture Sensitivity Level (MSL) is 1 Unlimited. This MOSFET is suitable for various power electronics applications where high voltage and current handling are required.

STD10NM60N Quick Information

Product Type: Power MOSFET
Canonical Name: STD10NM60N N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET
Subcategory: N-Channel Power MOSFET

STD10NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

STD10NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD10NM60N Features

  • 600V Drain to Source Breakdown Voltage.
  • 8A Continuous Drain Current.
  • 70W Maximum Power Dissipation.
  • 550mOhm Rds On at 4A, 10V.
  • DPAK Surface Mount Package.

STD10NM60N Applications

  • Suitable for high-voltage power switching.
  • Used in power supply designs.
  • Ideal for motor control circuits.
  • Applicable in industrial automation.

STD10NM60N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain to Source Breakdown Voltage of the STD10NM60N?

The Drain to Source Breakdown Voltage is 600 V.

What is the maximum continuous drain current for the STD10NM60N?

The maximum continuous drain current (ID) is 8 A.

What is the maximum power dissipation of the STD10NM60N?

The maximum power dissipation is 70 W.

What is the Rds On for the STD10NM60N?

The Rds On is a maximum of 550 mOhm at 4A, 10V.

What is the operating temperature range for the STD10NM60N?

The operating temperature range is -55°C to 150°C.

What package type is the STD10NM60N available in?

The STD10NM60N is available in a DPAK surface mount package.

Is the STD10NM60N RoHS compliant?

The STD10NM60N is RoHS3 Compliant.

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