| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,239 pcs
|
1239 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD10NM50N is an N-channel Power MOSFET utilizing MDmesh™ II technology. It offers a 500V drain-source voltage and a continuous drain current of 7A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 630mOhm at 3.5A and 10V Vgs, an input capacitance of 450pF, and a gate charge of 17nC. The device operates at temperatures up to 150°C (TJ).
This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. It is suitable for demanding high efficiency converter applications.
The device is rated for a maximum power dissipation of 70W at 25°C case temperature and has a gate-source voltage range of ±25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-252-3, DPAK (2 Leads + Tab), SC-63; surface mount.
150°C.
7A at Tc=25°C, 5A at Tc=100°C.
630mOhm maximum at 3.5A, 10V.
4V maximum at 250µA.
450pF at 50V Vds.