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STD10N60M2 The STMicroelectronics STD10N60M2 is an N-Channel MOSFET designed for power applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 7.5A.
Mfr Part #:

STD10N60M2

Available from 4 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD10N60M2 is an N-Channel MOSFET designed for power applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 7.5A.
✓ Total Stock: 97,594 pcs
$ Price Range: $2.56

STD10N60M2 Available from 4 distributors

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Fe Components ✓
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67,500 pcs
On Request
67500 pcs On Request 1 On Request On Request On Request On Request On Request
Seba Components ✓
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20,000 pcs
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20000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
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8,520 pcs
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8520 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
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1,574 pcs
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1574 pcs On Request 1 On Request On Request On Request On Request On Request
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STD10N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STD10N60M2 Description

Short technical summary and product information.

The STMicroelectronics STD10N60M2 is a power MOSFET with an N-Channel configuration. It offers a drain-source breakdown voltage of 600V and a continuous drain current capability of 7.5A at a case temperature.

 

Key electrical characteristics include a maximum drain-source on-resistance of 600mOhm at 3A and 10V Vgs, and a gate charge of 13.5nC at 10V Vgs. The gate-source voltage is rated for ±25V, with a threshold voltage of 4V at 250µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It has a power dissipation rating of 85W at the case temperature. The device is manufactured using MOSFET (Metal Oxide) technology.

 

The STD10N60M2 is supplied in a DPAK surface mount package, suitable for reel packaging. The factory pack quantity is 2500 units.

STD10N60M2 Quick Information

Product Type: MOSFET
Series: MDmesh II
Canonical Name: STD10N60M2 N-Channel MOSFET
Subcategory: MOSFETs

STD10N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD10N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD10N60M2 Features

  • 600V drain-source breakdown voltage.
  • 7.5A continuous drain current.
  • 600mOhm maximum Rds On.
  • 13.5nC gate charge.
  • DPAK surface mount package.

STD10N60M2 Applications

  • Suitable for power switching applications.
  • Used in power supply designs.
  • Ideal for motor control circuits.
  • Applicable in lighting control systems.

STD10N60M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the STD10N60M2?

600 V.

What is the package type of the STD10N60M2?

DPAK-2 (TO-252-3) surface mount package.

What is the operating temperature range of the STD10N60M2?

-55°C to 150°C junction temperature.

What is the continuous drain current of the STD10N60M2?

7.5 A at case temperature.

What is the maximum on-resistance of the STD10N60M2?

600 mOhm at 3A drain current and 10V gate drive.

What is the maximum gate charge of the STD10N60M2?

13.5 nC at 10V gate-source voltage.

What is the maximum gate-source threshold voltage of the STD10N60M2?

4 V at 250µA drain current.

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