| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD100N10F7 is a single N-Channel MOSFET with a drain-source voltage rating of 100V and a continuous drain current capability of 80A at the case temperature.
This MOSFET features a low on-resistance of 8mOhm at 40A and 10V Vgs, along with a gate charge of 61nC at 10V Vgs. The gate threshold voltage is a maximum of 4.5V at 250µA. Its input capacitance is rated at 4369pF at 50V Vds.
Designed for surface mounting, the STD100N10F7 comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 120W (Tc). The maximum gate-source voltage is ±20V.
This component is suitable for various power switching applications where high current and voltage handling are required in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
80A at case temperature.
8mOhm maximum at 40A and 10V gate drive.
-55°C to 175°C (junction).
TO-252-3 (DPAK) surface mount package.
4.5V maximum at 250µA drain current.