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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,296 pcs
|
7296 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base Peak Current | |
| Base-Source Current | |
| Base-Source Voltage | |
| Collector Peak Current | |
| Collector-Source Current | |
| Current Rating (Amps) | |
| Current Rating (Maximum) | |
| Fall Time | |
| Gate Threshold Voltage | |
| Gate-Source Charge | |
| Gate-Source Leakage | |
| Gate-Source Voltage | |
| Input Capacitance | |
| Max Operating Junction Temperature | |
| Maximum Collector-Source Voltage without Snubber | |
| Mounting Type | |
| Source-Base Current | |
| Source-Base Voltage | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Thermal Resistance Junction-Case | |
| Total Dissipation | |
| Transistor Type | |
| Vbe On (Maximum @ VGS = 10 V, IC = 0.7 A, IB = 70 mA) | |
| Vbe On (Maximum @ VGS = 10 V, IC = 1.8 A, IB = 0.36 A) | |
| Vce On (Maximum @ VGS = 10 V, IC = 0.7 A, IB = 70 mA) | |
| Vce On (Maximum @ VGS = 10 V, IC = 1.8 A, IB = 0.36 A) | |
| Voltage | |
| Voltage - Maximum | |
| hfe (Minimum @ IC = 0.7 A, VCS = 1 V, VGS = 10 V) | |
| hfe (Minimum @ IC = 1.8 A, VCS = 1 V, VGS = 10 V) |
The STC03DE150 is a high-voltage emitter-switched bipolar transistor (ESBT) manufactured by STMicroelectronics. Designed for power switching applications, it combines the advantages of MOSFETs and bipolar transistors, offering high voltage capability with fast switching performance.
Key specifications include a maximum collector-source voltage of 1500V and a continuous collector current rating of 3A, with a peak current capability of 6A. The device can dissipate up to 100W of power at a case temperature of 25°C. The typical storage time is 760 ns and fall time is 14 ns under inductive load conditions, enabling efficient switching in high-frequency circuits.
The STC03DE150 is housed in a TO-247-4L through-hole package, suitable for efficient thermal management. The junction-to-case thermal resistance is 1°C/W, aiding heat dissipation. The gate threshold voltage ranges from 1.5V to 3V, and the input capacitance is typically 750 pF.
This transistor is ideal for use in high-voltage power supplies, power factor correction circuits, resonant converters, and induction heating systems. Its robust design ensures reliable operation in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-source voltage is 1500V.
The maximum continuous collector current is 3A, with a peak current of 6A (tp<5ms).
The maximum power dissipation is 100W at a case temperature of 25°C.
The STC03DE150 is available in a TO-247-4L through-hole package.
The gate threshold voltage (VGS(th)) ranges from 1.5V to 3V.
The storage temperature range is -65°C to 125°C.
The typical fall time is 14 ns under inductive load at IC=1.8A.