STBV45 The STMicroelectronics STBV45 is a high voltage, fast-switching NPN power transistor. It features a 400V collector-emitter voltage and 0.75A collector current, housed in a TO-92 package.
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STBV45

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STBV45 is a high voltage, fast-switching NPN power transistor. It features a 400V collector-emitter voltage and 0.75A collector current, housed in a TO-92 package.
✓ Total Stock: 47,500 pcs
$ Price Range: $0.51

STBV45 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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47,500 pcs
47500 pcs On Request 1 On Request On Request 1115 On Request On Request

STBV45 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

STBV45 Description

Short technical summary and product information.

The STMicroelectronics STBV45 is a high voltage, fast-switching NPN power transistor designed for applications requiring high voltage capability and rapid switching speeds. Manufactured using high voltage multi-epitaxial planar technology, this transistor offers a collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 0.75A.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCES) of 700V and a collector-emitter sustaining voltage (VCEO(sus)) of 400V. The device exhibits a minimum DC current gain (hFE) of 5 at 400mA and 5V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 1.5V at 135mA and 400mA. Its fast switching speed is highlighted by a fall time of 0.3 µs under specific inductive load conditions.

 

This transistor is supplied in a TO-92 package, suitable for through-hole mounting. The maximum operating junction temperature is 150°C, with a total power dissipation of 0.95W at 25°C. Applications include compact fluorescent lamps (CFLs) and switch mode power supplies (SMPS) for battery chargers.

 

The STBV45G and STBV45G-AP variants are supplied using halogen-free molding compound, indicating a focus on environmental considerations for specific product codes.

STBV45 Quick Information

Product Type: NPN Transistor
Canonical Name: STMicroelectronics STBV45 High Voltage Fast-Switching NPN Power Transistor
Subcategory: NPN

STBV45 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STBV45 Estimated Pricing

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1+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

STBV45 Features

  • High voltage capability up to 700V.
  • Fast switching speed for efficient operation.
  • NPN bipolar junction transistor.
  • TO-92 package for through-hole mounting.
  • Suitable for SMPS and CFL applications.

STBV45 Applications

  • Compact fluorescent lamp ballasts.
  • Switch mode power supplies.
  • Battery charger power circuits.
  • High voltage switching applications.

STBV45 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the STBV45?

The maximum collector-emitter voltage (VCEO) is 400V.

What is the maximum collector current of the STBV45?

The maximum collector current (IC) is 0.75A, with a peak current of 1.5A.

What is the package type of the STBV45?

The STBV45 is available in a TO-92-3 (TO-226AA) through-hole package.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TJ) is 150°C.

What is the DC current gain (hFE) of the STBV45?

The minimum hFE is 12 at IC=0.5mA, VCE=2V; 10 at IC=0.2A, VCE=5V; and 5 at IC=0.4A, VCE=5V.

What is the collector-emitter saturation voltage of the STBV45?

The maximum VCE(sat) is 0.2V at IC=0.2A, IB=40mA; 0.3V at IC=0.3A, IB=75mA; and 0.4V at IC=0.4A, IB=135mA.

What is the fall time of the STBV45?

The maximum fall time is 0.3µs under inductive load conditions (IC=0.2A, Vclamp=300V, IB1=-IB2=40mA, L=3mH).

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