| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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47,500 pcs
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47500 pcs | On Request | 1 | On Request | On Request | 1115 | On Request | On Request |
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The STMicroelectronics STBV45 is a high voltage, fast-switching NPN power transistor designed for applications requiring high voltage capability and rapid switching speeds. Manufactured using high voltage multi-epitaxial planar technology, this transistor offers a collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 0.75A.
Key electrical characteristics include a maximum collector-emitter voltage (VCES) of 700V and a collector-emitter sustaining voltage (VCEO(sus)) of 400V. The device exhibits a minimum DC current gain (hFE) of 5 at 400mA and 5V, and a maximum collector-emitter saturation voltage (VCE(sat)) of 1.5V at 135mA and 400mA. Its fast switching speed is highlighted by a fall time of 0.3 µs under specific inductive load conditions.
This transistor is supplied in a TO-92 package, suitable for through-hole mounting. The maximum operating junction temperature is 150°C, with a total power dissipation of 0.95W at 25°C. Applications include compact fluorescent lamps (CFLs) and switch mode power supplies (SMPS) for battery chargers.
The STBV45G and STBV45G-AP variants are supplied using halogen-free molding compound, indicating a focus on environmental considerations for specific product codes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 400V.
The maximum collector current (IC) is 0.75A, with a peak current of 1.5A.
The STBV45 is available in a TO-92-3 (TO-226AA) through-hole package.
The maximum operating junction temperature (TJ) is 150°C.
The minimum hFE is 12 at IC=0.5mA, VCE=2V; 10 at IC=0.2A, VCE=5V; and 5 at IC=0.4A, VCE=5V.
The maximum VCE(sat) is 0.2V at IC=0.2A, IB=40mA; 0.3V at IC=0.3A, IB=75mA; and 0.4V at IC=0.4A, IB=135mA.
The maximum fall time is 0.3µs under inductive load conditions (IC=0.2A, Vclamp=300V, IB1=-IB2=40mA, L=3mH).