| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB9NK90Z is an N-Channel MOSFET belonging to the SuperMESH™ series. It is designed for applications requiring high voltage handling capabilities, featuring a maximum drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 8A at 25°C.
This MOSFET offers a maximum on-resistance (Rds On) of 1.3 Ohms at a gate drive voltage of 10V and a drain current of 3.6A. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 100µA, with a maximum gate-source voltage (Vgs) of ±30V.
Packaged in a surface-mount D2PAK (TO-263-3) case, the STB9NK90Z is suitable for various electronic designs. It operates within a temperature range of -55°C to 150°C (TJ). The input capacitance (Ciss) is up to 2115 pF at 25V, and the gate charge (Qg) is up to 72 nC at 10V. Its power dissipation capability is rated at a maximum of 160W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 150°C.
The STB9NK90Z is available in a TO-263-3 (D²Pak) surface mount package.
The maximum drain-source voltage is 900V.
The maximum continuous drain current at 25°C case temperature is 8A.
The maximum on-resistance is 1.3 Ohm at 3.6A drain current and 10V gate drive.
The maximum gate threshold voltage is 4.5V at 100µA drain current.
The maximum gate charge at 10V gate-source voltage is 72nC.