| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The STMicroelectronics STB9NK80Z is a high-performance N-Channel MOSFET designed for demanding power applications. It offers a robust 800V drain-to-source voltage (Vdss) and a continuous drain current of 5.2A at a case temperature.
Key electrical characteristics include a maximum on-resistance of 1.8 Ohms at 2.6A and 10V Vgs, a gate charge of 40 nC, and an input capacitance of 1138 pF. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a surface-mount D2PAK package (TO-263-3, D²Pak). Its robust design makes it suitable for various power switching and control applications where high voltage and reliable performance are critical.
Compliance information indicates RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STB9NK80Z is 800V.
The STB9NK80Z has a continuous drain current rating of 5.2A (Tc).
The maximum on-resistance (Rds On) for the STB9NK80Z is 1.8 Ohms, specified at 2.6A drain current and 10V gate-source voltage.
The operating temperature range for the STB9NK80Z is -55°C to 150°C (TJ).
The STB9NK80Z MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.
The STB9NK80Z is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STB9NK80Z is 1 Unlimited.