STB9NK50ZT4 The STMicroelectronics STB9NK50ZT4 is an N-Channel MOSFET with a 500V drain-source voltage and 7.2A continuous drain current. It is designed for surface mounting in a D2PAK package.
Mfr Part #:

STB9NK50ZT4

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB9NK50ZT4 is an N-Channel MOSFET with a 500V drain-source voltage and 7.2A continuous drain current. It is designed for surface mounting in a D2PAK package.
✓ Total Stock: 11,000 pcs
$ Price Range: $2.56

STB9NK50ZT4 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 725 On Request On Request
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request

STB9NK50ZT4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB9NK50ZT4 Description

Short technical summary and product information.

The STMicroelectronics STB9NK50ZT4 is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 7.2A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 850mOhm at 3.6A and 10V, a gate threshold voltage (Vgs(th)) of 4.5V at 100µA, and a maximum gate charge (Qg) of 32nC at 10V. The device operates with a drive voltage of 10V and has a maximum gate-source voltage (Vgs) of ±30V.

 

This MOSFET is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. It has an operating temperature range of -55°C to 150°C (TJ) and a maximum power dissipation of 110W (Tc). The technology used is MOSFET (Metal Oxide).

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH Unaffected status. The series is identified as SuperMESH™.

STB9NK50ZT4 Quick Information

Product Type: MOSFET
Series: SuperMESH™
Canonical Name: STMicroelectronics STB9NK50ZT4 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STB9NK50ZT4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB9NK50ZT4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB9NK50ZT4 Features

  • 500V drain-to-source voltage rating.
  • 7.2A continuous drain current capability.
  • 850mOhm maximum on-resistance.
  • Surface mount D2PAK package.
  • N-Channel MOSFET technology.

STB9NK50ZT4 Applications

  • Suitable for power switching circuits.
  • Used in high voltage applications.
  • Ideal for power supply designs.
  • Efficient for general purpose switching.

STB9NK50ZT4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STB9NK50ZT4?

500V.

What is the continuous drain current rating?

7.2A at 25°C case temperature.

What is the on-resistance?

850 mOhm maximum at 3.6A and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the STB9NK50ZT4 available in?

D2PAK (TO-263-3) surface mount package.

What is the gate charge?

32 nC at 10V gate-source voltage.

What is the input capacitance?

910 pF at 25V drain-source voltage.

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