STB8NM60N The STMicroelectronics STB8NM60N is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and a 7A continuous current rating.
Mfr Part #:

STB8NM60N

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB8NM60N is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and a 7A continuous current rating.
✓ Total Stock: 1,144 pcs
$ Price Range: $2.56

STB8NM60N Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,144 pcs
1144 pcs On Request 1 On Request On Request On Request On Request On Request

STB8NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB8NM60N Description

Short technical summary and product information.

The STMicroelectronics STB8NM60N is a single N-Channel MOSFET belonging to the discrete semiconductor product category. It is designed with a 600V drain-to-source voltage (Vdss) and can handle a continuous current of 7A at the case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 650mOhm at 3.5A and 10V, a gate charge (Qg) of 19nC at 10V, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The input capacitance (Ciss) is rated at 560pF at 50V. The device operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. It has a maximum power dissipation of 70W (Tc).

 

The STB8NM60N is listed as RoHS3 compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status. It is identified by distributor part numbers such as 497-8771-2-ND, 497-8771-1-ND, and 497-8771-6-ND.

STB8NM60N Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB8NM60N N-Channel MOSFET
Subcategory: N-Channel

STB8NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB8NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB8NM60N Features

  • 600V drain-to-source voltage rating.
  • 7A continuous current capability.
  • Low 650mOhm on-resistance.
  • Surface mount D2PAK package.
  • RoHS3 compliant status.

STB8NM60N Applications

  • Used in high-voltage power supplies
  • Suitable for DC-DC converters
  • Ideal for switching power circuits
  • Applied in motor control systems
  • Used in lighting ballast designs

STB8NM60N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the STB8NM60N MOSFET?

The drain-to-source voltage (Vdss) for the STB8NM60N MOSFET is 600 V.

What is the maximum continuous drain current for the STB8NM60N?

The maximum continuous drain current for the STB8NM60N is 7A.

What is the on-resistance (Rds On) of the STB8NM60N MOSFET?

The on-resistance (Rds On) of the STB8NM60N MOSFET is a maximum of 650mOhm at 3.5A and 10V.

What is the operating temperature range for the STB8NM60N?

The operating temperature range for the STB8NM60N is -55°C to 150°C (TJ).

What package type is the STB8NM60N MOSFET supplied in?

The STB8NM60N MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

Is the STB8NM60N RoHS compliant?

Yes, the STB8NM60N is RoHS3 compliant.

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