| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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179 pcs
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179 pcs | On Request | 1 | On Request | On Request | 1113+ | On Request | On Request |
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The STMicroelectronics STB8NM60D is a single N-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor technology family. It is designed for power switching applications, featuring a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 8A at the case temperature.
Key electrical characteristics include a maximum on-resistance of 1 Ohm at 2.5A drain current and 10V gate-source voltage, with a gate threshold voltage of 5V at 250µA. The device has a maximum gate-source voltage rating of ±30V and an input capacitance of 380pF at 25V.
This MOSFET is rated for a maximum power dissipation of 100W (Tc) and operates within a temperature range of -65°C to 150°C (TJ). It is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB configuration and utilizes surface mount technology.
The STB8NM60D is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STB8NM60D is 600 V.
The continuous drain current for the STB8NM60D is 8 A (Tc).
The operating temperature range for the STB8NM60D is -65°C to 150°C (TJ).
The STB8NM60D MOSFET is designed for surface mount installation.
The STB8NM60D is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STB8NM60D is 1 Unlimited.