| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB8N90K5 is an N-Channel MOSFET belonging to the discrete semiconductor products category. It is designed for applications requiring high voltage handling capabilities, with a maximum drain-to-source voltage (Vdss) of 900V.
This MOSFET offers a continuous drain current of 8A (at case temperature) and a maximum on-resistance of 800mOhm at 1.17A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 5V at 100µA, and the maximum gate-source voltage is ±30V. It operates within a temperature range of -55°C to 150°C (TJ).
The device utilizes MOSFET (Metal Oxide) technology and is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB format, suitable for surface mounting. Its high power dissipation capability of 130W (at case temperature) makes it suitable for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
8A at case temperature (Tc).
130W at case temperature (Tc).
-55°C to 150°C (junction temperature).
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; surface mount; supplier device package D2PAK.
800 mOhm maximum at 1.17A drain current and 10V gate-source voltage.
5V maximum at 100µA drain current.