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STB85NF55T4 STMicroelectronics STB85NF55T4 is an N-channel power MOSFET rated for 55V drain-source voltage and 80A continuous drain current. It comes in a D2PAK surface-mount package.
Mfr Part #:

STB85NF55T4

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STMicroelectronics STB85NF55T4 is an N-channel power MOSFET rated for 55V drain-source voltage and 80A continuous drain current. It comes in a D2PAK surface-mount package.
✓ Total Stock: 25,180 pcs
$ Price Range: $2.56

STB85NF55T4 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
24,180 pcs
On Request
24180 pcs On Request 1 On Request On Request 15+ On Request On Request
Fe Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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STB85NF55T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB85NF55T4 Description

Short technical summary and product information.

The STB85NF55T4 is an N-channel power MOSFET from STMicroelectronics designed for high-efficiency switching applications. It features a maximum drain-to-source voltage (Vdss) of 55V and a continuous drain current of 80A at 25°C case temperature. The device has a typical gate charge of 150nC at Vgs=10V and an input capacitance of 3700pF at Vds=25V, enabling fast switching with moderate drive requirements.

 

This MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly and compact power designs. The package offers good thermal performance for power dissipation in applications such as DC-DC converters, motor drives, and power management circuits.

 

Key electrical characteristics include a maximum gate charge of 150nC and input capacitance of 3700pF, which influence switching losses and gate drive design. The 55V voltage rating provides margin for 12V, 24V, and 48V bus applications.

STB85NF55T4 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB85NF55T4 N-Channel Power MOSFET
Subcategory: Single MOSFET

STB85NF55T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB85NF55T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB85NF55T4 Features

  • 55V maximum drain-to-source voltage rating.
  • 80A continuous drain current at 25°C.
  • 150nC typical gate charge for fast switching.
  • 3700pF input capacitance for moderate drive needs.
  • D2PAK surface-mount package for compact designs.

STB85NF55T4 Applications

  • Used in DC-DC converter power stages.
  • Suitable for motor drive and control circuits.
  • Applied in power management and load switching.
  • Works in automotive and industrial systems.

STB85NF55T4 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STB85NF55T4?

The maximum drain-to-source voltage (Vdss) is 55V.

What is the continuous drain current rating of the STB85NF55T4?

The continuous drain current is 80A at a case temperature of 25°C.

What is the gate charge of the STB85NF55T4?

The typical gate charge is 150nC at Vgs=10V, with a maximum of 150nC at Vds=25V.

What is the input capacitance of the STB85NF55T4?

The maximum input capacitance (Ciss) is 3700pF at Vds=25V.

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