| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,373 pcs
|
13373 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB80NF55L-08-1 is an N-channel power MOSFET from STMicroelectronics designed for high-current switching applications. It offers a drain-source voltage rating of 55V and a continuous drain current of 80A at 25°C case temperature. The device features a low maximum on-resistance of 8mOhm at 40A drain current with a 10V gate drive, enabling efficient power conversion.
Key electrical characteristics include a pulsed drain current capability of 320A, a maximum power dissipation of 300W at 25°C, and a gate threshold voltage range of 1V to 2.5V (at 250µA). The total gate charge is 100nC at 4.5V and 120nC at 10V, with input capacitance of 4350pF typical. The device is housed in an I2PAK (TO-262) through-hole package, suitable for robust mounting in power circuits.
This MOSFET is suitable for applications such as power supplies, motor drives, and DC-DC converters where high efficiency and reliability are required. The low on-resistance and high current rating make it ideal for switching loads in automotive and industrial environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55 V.
I2PAK (TO-262).
80 A.
8 mOhm at 40A drain current with 10V gate drive.
Minimum 1 V, typical 1.6 V, maximum 2.5 V at ID=250µA.