STB80NF55-08T4 The STMicroelectronics STB80NF55-08T4 is an N-Channel Power MOSFET designed for switching applications. It offers a 55V drain-source voltage and 80A continuous current.
Mfr Part #:

STB80NF55-08T4

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB80NF55-08T4 is an N-Channel Power MOSFET designed for switching applications. It offers a 55V drain-source voltage and 80A continuous current.
✓ Total Stock: 10 pcs
$ Price Range: $2.56

STB80NF55-08T4 Available from 1 distributor

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10 pcs
10 pcs On Request 1 On Request On Request 15+ On Request On Request

STB80NF55-08T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB80NF55-08T4 Description

Short technical summary and product information.

The STMicroelectronics STB80NF55-08T4 is an N-Channel Power MOSFET belonging to the STripFET™ family. It is engineered for high-density applications requiring low on-resistance and rugged avalanche characteristics.

 

Key electrical specifications include a drain-source voltage (Vds) of 55V, a continuous drain current of 80A at 25°C case temperature, and a maximum on-resistance (Rds On) of 8mOhm at 40A and 10V gate-source voltage. The device operates within a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 300W at 25°C case temperature.

 

This MOSFET is housed in a TO-263-3, D²Pak surface mount package, making it suitable for various power switching applications. Its design emphasizes manufacturing reproducibility and robust performance.

 

The STB80NF55-08T4 is suitable for applications requiring efficient power switching and high current handling capabilities.

STB80NF55-08T4 Quick Information

Product Type: Power MOSFET
Canonical Name: STMicroelectronics STB80NF55-08T4 N-Channel Power MOSFET
Subcategory: N-Channel

STB80NF55-08T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB80NF55-08T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB80NF55-08T4 Features

  • N-Channel MOSFET for switching applications.
  • 55V drain-source voltage rating.
  • 80A continuous drain current.
  • Low 8mOhm on-resistance.
  • Surface mount D2PAK package.

STB80NF55-08T4 Applications

  • Used in high-current DC-DC converters.
  • Ideal for motor control and drive circuits.
  • Suitable for power supply switching stages.
  • Applied in automotive electrical systems.

STB80NF55-08T4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STB80NF55-08T4?

The drain-source voltage (Vdss) is 55V.

What is the continuous drain current of the STB80NF55-08T4?

The continuous drain current is 80A at a case temperature of 25°C.

What is the on-resistance of the STB80NF55-08T4?

The maximum on-resistance is 8mOhm at a gate-source voltage of 10V and a drain current of 40A.

What package is the STB80NF55-08T4 available in?

The STB80NF55-08T4 is available in a D2PAK (TO-263) surface-mount package.

What is the operating temperature range of the STB80NF55-08T4?

The operating junction temperature range is -55°C to 175°C.

What is the gate charge of the STB80NF55-08T4?

The maximum gate charge is 155nC at a gate-source voltage of 10V.

What is the avalanche energy rating of the STB80NF55-08T4?

The single-pulse avalanche energy is 1000mJ starting from a junction temperature of 25°C.

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