| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
988 pcs
|
988 pcs | On Request | 1 | On Request | On Request | 2004 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB80NF55-08-1 is an N-Channel Power MOSFET utilizing STripFET™ II technology. It is designed for high current switching applications and automotive environments.
Key electrical characteristics include a drain-source voltage (Vds) of 55V, a continuous drain current of 80A at TC=25°C, and a low typical on-resistance (Rds(on)) of 0.0065Ω at 40A, 10V. The device also features a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA and a maximum gate-source voltage of ±20V.
With a maximum power dissipation of 300W at TC=25°C and a thermal resistance junction-to-case of 0.5°C/W, the STB80NF55-08-1 is suitable for demanding applications. It operates within a junction temperature range of -55°C to 175°C.
The MOSFET is available in TO-220, D2PAK, and I2PAK packages, offering flexibility for different mounting requirements. The I2PAK package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
80A at 25°C case temperature.
8mOhm maximum at VGS=10V, ID=40A.
-55°C to 175°C.
TO-262-3 Long Leads, I²Pak, TO-262AA (through-hole).
4V maximum at ID=250µA.
870mJ.