| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STB80NF55-06T4 is a high-performance N-Channel MOSFET designed for demanding applications. It offers a maximum drain-to-source voltage (Vdss) of 55V and can handle a continuous drain current of 80A at a case temperature (Tc).
The MOSFET features a low on-resistance (Rds On) of 6.5mOhm at 40A and 10V, ensuring efficient power transfer. Its input capacitance (Ciss) is 4400pF at 25V, and the gate charge (Qg) is 189nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage (Vgs Max) of ±20V.
Operating within a temperature range of -55°C to 175°C (TJ), this device is built using MOSFET (Metal Oxide) technology. It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.
The STB80NF55-06T4 is RoHS3 compliant, has an MSL of 1 Unlimited, and is REACH unaffected. Its high power dissipation capability of 300W (Tc) makes it suitable for various power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
80A at Tc.
6.5 mOhm maximum at 40A drain current and 10V gate-source voltage.
-55°C to 175°C junction temperature.
Surface-mount TO-263-3 / D2PAK (2 leads + tab).
189 nC maximum at 10V gate-source voltage.
4400 pF maximum at 25V drain-source voltage.