| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | 1828+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB80NF03L-04T4 is an N-channel power MOSFET from STMicroelectronics designed for low-voltage, high-current switching applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current of 80A at Tc. The on-resistance is extremely low at 4 mOhm maximum (at Id=40A, Vgs=10V), enabling efficient power handling.
The device offers a gate threshold voltage of 1V max, gate charge of 110 nC at Vgs=4.5V, and input capacitance of 5500 pF at Vds=25V. Maximum power dissipation is 300W at Tc. The operating junction temperature range is -60°C to 175°C.
This MOSFET is housed in a surface-mount D2PAK (TO-263-3) package, suitable for automated assembly. The drive voltage range is 4.5V to 10V for optimal Rds(on).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
80A at Tc.
4 mOhm maximum at Id=40A, Vgs=10V.
D2PAK (TO-263-3, D²Pak).
-60°C to 175°C (junction).