| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
201 pcs
|
201 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB80N4F6AG is an N-Channel power MOSFET manufactured by STMicroelectronics. It is designed for high-current switching applications, featuring a drain-to-source voltage (Vdss) of 40V and a continuous drain current rating of 80A. The device is housed in a D2PAK surface-mount package, suitable for automated assembly processes.
This MOSFET is intended for use in power management circuits, DC-DC converters, and motor control systems where efficient switching and low on-resistance are critical. The 40V breakdown voltage provides adequate headroom for 12V and 24V rail applications.
The D2PAK package offers a compact footprint with good thermal dissipation characteristics, making it appropriate for designs where board space is limited but power handling is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The continuous drain current rating is 80A.
The STB80N4F6AG is available in a D2PAK surface-mount package.