STB80N20M5 The STB80N20M5 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It features a 200V drain-source voltage and a 61A continuous drain current.
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STB80N20M5

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STB80N20M5 is an N-Channel MOSFET from STMicroelectronics designed for power applications. It features a 200V drain-source voltage and a 61A continuous drain current.
✓ Total Stock: 1,000 pcs
$ Price Range: $2.56

STB80N20M5 Available from 1 distributor

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✓ Non-Authorised
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STB80N20M5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB80N20M5 Description

Short technical summary and product information.

The STB80N20M5 is a high-performance N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for power switching applications, offering a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 61A at a case temperature (Tc).

 

Key electrical characteristics include a low on-resistance (Rds On) of 23mOhm at 30.5A and 10V gate-source voltage, and a gate charge (Qg) of 104nC at 10V. The input capacitance (Ciss) is rated at 4329pF at 50V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, with a maximum gate-to-source voltage (Vgs) of ±25V.

 

This MOSFET is housed in a TO-263-3, D²Pak package, suitable for surface mounting. It operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 190W (Tc). The technology employed is MOSFET (Metal Oxide).

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These attributes make the STB80N20M5 a robust choice for various power management designs.

STB80N20M5 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB80N20M5 N-Channel MOSFET
Subcategory: N-Channel

STB80N20M5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB80N20M5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB80N20M5 Features

  • 200V drain-source voltage rating.
  • 61A continuous drain current.
  • Low 23mOhm on-resistance.
  • Surface mount D2PAK package.
  • RoHS3 compliant.

STB80N20M5 Applications

  • Power supply and DC-DC converter circuits.
  • Motor control and inverter applications.
  • High-efficiency switching power systems.
  • Automotive and industrial power management.

STB80N20M5 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB80N20M5?

The maximum drain-source voltage (Vdss) is 200V.

What is the continuous drain current of the STB80N20M5?

The continuous drain current is 61A.

What is the on-resistance of the STB80N20M5?

The on-resistance (Rds On) is a maximum of 23mOhm at 30.5A and 10V.

What package type is the STB80N20M5?

The STB80N20M5 is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

What is the operating temperature range for this MOSFET?

The operating temperature is up to 150°C (TJ).

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