| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB7ANM60N is a high-performance N-Channel MOSFET suitable for various power electronics applications. It offers a robust 600V drain-to-source voltage (Vdss) and can handle a continuous drain current of up to 5A.
This MOSFET is designed with a low on-resistance of 900mOhm at 2.5A and 10V gate-source voltage, ensuring efficient power transfer. The input capacitance (Ciss) is 363pF at 50V, and the gate charge (Qg) is 14nC at 10V, facilitating fast switching speeds. The operating temperature range extends up to 150°C (TJ), making it suitable for demanding environments.
Packaged in a surface-mount D2PAK (TO-263) form factor, the STB7ANM60N is designed for easy integration into printed circuit boards. Its construction utilizes MOSFET (Metal Oxide) technology, providing reliable performance for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The maximum continuous drain current is 5A at case temperature (Tc).
The maximum on-resistance (Rds on) is 900mOhm at Id=2.5A and Vgs=10V.
The maximum gate charge (Qg) is 14nC at Vgs=10V.
The maximum junction temperature is 150°C.
It comes in a D2PAK (TO-263-3) surface-mount package.