| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
980 pcs
|
980 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STMicroelectronics STB75N20 is an N-Channel Power MOSFET from the STripFET™ series, designed for high-efficiency isolated DC-DC converters and other switching applications. It offers a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 75A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 0.034 Ohm maximum at 37A and 10V, a gate charge (Qg) of 84 nC maximum at 10V, and an input capacitance (Ciss) of 3260 pF maximum at 25V. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, with a maximum gate-source voltage of ±20V.
This MOSFET has a maximum power dissipation of 190W at 25°C (Tc) and operates within a junction temperature range of -50°C to 150°C. It is packaged in a surface-mount D2PAK (TO-263AB) case, suitable for various electronic designs.
The STB75N20 also features exceptional dv/dt capability and is 100% avalanche tested, making it a robust choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
75A.
0.034 Ohm at 37A and 10V gate drive.
-50°C to 150°C.
TO-263-3 (D2PAK) surface mount.
84nC at 10V.
205mJ single pulse.