| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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1,356 pcs
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1356 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
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1,077 pcs
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1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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373 pcs
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373 pcs | On Request | 1 | On Request | On Request | 1825 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB6NK90ZT4 is a high-voltage N-Channel MOSFET. It is designed for power efficient energy conversion and management applications, offering a breakdown voltage of 900V.
Key electrical characteristics include a maximum drain current of 5.8A and a maximum on-resistance of 2 Ohms at 2.9A and 10V gate-source voltage. The input capacitance is 1350 pF at 25V, and the gate charge is 60.5 nC at 10V. The gate threshold voltage is 4.5V at 100µA, with a maximum gate-to-source voltage of ±30V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 140W (Tc). It is housed in a Surface Mount D2PAK package, also known as TO-263-3 or TO-263AB.
The STB6NK90ZT4 is suitable for applications requiring robust power handling and efficient switching. Its construction utilizes MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface-mount package.
-55°C to 150°C (junction temperature).
5.8A at case temperature (Tc).
4.5V maximum at Id=100µA.
140W at case temperature (Tc).
2Ω maximum at Id=2.9A and Vgs=10V.