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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,487 pcs
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1487 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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898 pcs
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898 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB6NK60ZT4 is an N-channel power MOSFET designed for high-voltage applications such as power supplies and motor control. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current of 6A (Tc).
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4.5V (max) at 100µA, a maximum gate-to-source voltage (Vgs) of ±30V, and a maximum on-resistance (Rds On) of 1.2 Ohm at 3A, 10V. The input capacitance (Ciss) is 905 pF (max) at 25V, and the gate charge (Qg) is 46 nC (max) at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 110W (Tc). It is housed in a TO-263-3, D²Pak package and is suitable for surface mounting.
The STB6NK60ZT4 is classified under the MOSFET technology and is an N-channel type. It is designed for applications requiring robust high-voltage switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
The STB6NK60ZT4 is available in a TO-263-3 (D²Pak) surface-mount package.
-55°C to 150°C (junction temperature).
4.5V maximum at 100µA drain current.
1.2Ohm at 3A drain current and 10V gate-source voltage.
46nC at 10V gate-source voltage.
N-channel.