STB6NK60ZT4 The STB6NK60ZT4 is an N-channel power MOSFET from STMicroelectronics designed for high-voltage applications. It offers a 600V drain-source voltage and 6A continuous current.
Mfr Part #:

STB6NK60ZT4

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STB6NK60ZT4 is an N-channel power MOSFET from STMicroelectronics designed for high-voltage applications. It offers a 600V drain-source voltage and 6A continuous current.
✓ Total Stock: 11,385 pcs
$ Price Range: $2.56

STB6NK60ZT4 Available from 5 distributors

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✓ Non-Authorised

STB6NK60ZT4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB6NK60ZT4 Description

Short technical summary and product information.

The STMicroelectronics STB6NK60ZT4 is an N-channel power MOSFET designed for high-voltage applications such as power supplies and motor control. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current of 6A (Tc).

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4.5V (max) at 100µA, a maximum gate-to-source voltage (Vgs) of ±30V, and a maximum on-resistance (Rds On) of 1.2 Ohm at 3A, 10V. The input capacitance (Ciss) is 905 pF (max) at 25V, and the gate charge (Qg) is 46 nC (max) at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 110W (Tc). It is housed in a TO-263-3, D²Pak package and is suitable for surface mounting.

 

The STB6NK60ZT4 is classified under the MOSFET technology and is an N-channel type. It is designed for applications requiring robust high-voltage switching capabilities.

STB6NK60ZT4 Quick Information

Product Type: MOSFET
Series: SuperMESH
Canonical Name: STMicroelectronics STB6NK60ZT4 N-Channel Power MOSFET
Subcategory: Single FETs, MOSFETs

STB6NK60ZT4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB6NK60ZT4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB6NK60ZT4 Features

  • 600V drain-source voltage rating.
  • 6A continuous drain current.
  • 1.2 Ohm maximum on-resistance.
  • TO-263-3 surface-mount package.
  • Operates from -55°C to 150°C.

STB6NK60ZT4 Applications

  • Suitable for high-voltage power supply designs
  • Used in motor control circuits
  • Ideal for switching power converters
  • Applicable in industrial power systems

STB6NK60ZT4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STB6NK60ZT4?

600V.

What package does the STB6NK60ZT4 come in?

The STB6NK60ZT4 is available in a TO-263-3 (D²Pak) surface-mount package.

What is the operating temperature range of the STB6NK60ZT4?

-55°C to 150°C (junction temperature).

What is the gate threshold voltage of the STB6NK60ZT4?

4.5V maximum at 100µA drain current.

What is the maximum on-resistance of the STB6NK60ZT4?

1.2Ohm at 3A drain current and 10V gate-source voltage.

What is the gate charge of the STB6NK60ZT4?

46nC at 10V gate-source voltage.

Is the STB6NK60ZT4 an N-channel or P-channel MOSFET?

N-channel.

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