STB6NK60Z-1 The STMicroelectronics STB6NK60Z-1 is an N-Channel MOSFET designed for high voltage applications. It offers a 600V drain-source voltage and a continuous drain current of 6A.
Mfr Part #:

STB6NK60Z-1

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB6NK60Z-1 is an N-Channel MOSFET designed for high voltage applications. It offers a 600V drain-source voltage and a continuous drain current of 6A.
✓ Total Stock: 7,073 pcs
$ Price Range: $2.56

STB6NK60Z-1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,308 pcs
5308 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
1,765 pcs
1765 pcs On Request 1 On Request On Request 14+ On Request On Request

STB6NK60Z-1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB6NK60Z-1 Description

Short technical summary and product information.

The STMicroelectronics STB6NK60Z-1 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Tc) of 6A. The device has a maximum power dissipation of 110W (Tc) and a low on-resistance (Rds On) of 1.2 Ohm at 3A, 10V.

 

Key electrical characteristics include a gate charge (Qg) of 46 nC at 10V and an input capacitance (Ciss) of 905 pF at 25V. The threshold voltage (Vgs(th)) is 4.5V at 100µA, and the maximum gate-source voltage is ±30V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).

 

This component is housed in an I2PAK package with through-hole mounting. The package type is TO-262-3 Long Leads, I²Pak, TO-262AA. It is suitable for applications requiring high voltage switching and power handling capabilities.

 

The RoHS status is RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited. REACH status is REACH Unaffected.

STB6NK60Z-1 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB6NK60Z-1 N-Channel MOSFET
Subcategory: Single

STB6NK60Z-1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB6NK60Z-1 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB6NK60Z-1 Features

  • 600V drain-source voltage rating.
  • 6A continuous drain current.
  • 1.2 Ohm maximum on-resistance.
  • I2PAK package with through-hole mounting.
  • RoHS3 Compliant status.

STB6NK60Z-1 Applications

  • Suitable for high-voltage switching.
  • Power supply applications.
  • Motor control circuits.
  • General purpose power switching.

STB6NK60Z-1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STB6NK60Z-1?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current of the STB6NK60Z-1?

The continuous drain current is 6A.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 1.2 Ohm at 3A, 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STB6NK60Z-1 supplied in?

It is supplied in an I2PAK package, specifically TO-262-3 Long Leads, I²Pak, TO-262AA.

How is the STB6NK60Z-1 mounted?

It is mounted using the through-hole method.

What is the RoHS status of this component?

The RoHS status is RoHS3 Compliant.

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