STB6NB90 The STB6NB90 is an N-Channel MOSFET from STMicroelectronics with a 900V breakdown voltage and 6A continuous drain current. It features a Logic Level Gate and 0.6 Ohm Rds On.
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STB6NB90

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STB6NB90 is an N-Channel MOSFET from STMicroelectronics with a 900V breakdown voltage and 6A continuous drain current. It features a Logic Level Gate and 0.6 Ohm Rds On.
✓ Total Stock: 420 pcs
$ Price Range: $2.60

STB6NB90 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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420 pcs
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STB6NB90 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Features
Gate Charge
Lead Spacing
Lead Style
Rds On (Max) @ Id, Vgs
Storage Temperature
Technology

STB6NB90 Description

Short technical summary and product information.

The STB6NB90 is a discrete N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications, offering a high breakdown voltage of 900V and a continuous drain current capability of 6A at 25°C.

 

Key electrical characteristics include a typical gate threshold voltage (Vgs(th)) of 4V at 1mA and a low on-state resistance (Rds On) of 0.6 Ohms maximum at 10V. The gate charge (Qg) is 50nC at 10V, indicating efficient switching performance. This MOSFET features a Logic Level Gate, making it suitable for direct interface with microcontrollers and low-voltage logic circuits.

 

The component is packaged in a standard quantity of 1000 pieces. Environmental compliance data indicates RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH unaffected status, though this data has low confidence and should be verified.

STB6NB90 Quick Information

Product Type: MOSFET
Canonical Name: STB6NB90 N-Channel MOSFET
Subcategory: Single

STB6NB90 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB6NB90 Estimated Pricing

Qty Low High
1+ $2.60 $2.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB6NB90 Features

  • 900V drain-source breakdown voltage.
  • 6A continuous drain current rating.
  • Low on-resistance of 0.6 Ohm (max).
  • Logic level gate threshold (4V typical).
  • N-Channel power MOSFET technology.

STB6NB90 Applications

  • Ideal for high voltage power switching.
  • Suitable for microcontroller interfaces.
  • Used in power supply circuits.
  • Efficient for general purpose switching.

STB6NB90 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the STB6NB90 MOSFET?

The breakdown voltage (V(br)ceo) of the STB6NB90 MOSFET is 900V.

What is the continuous drain current for the STB6NB90?

The STB6NB90 MOSFET has a continuous drain current of 6A.

What is the on-state resistance (Rds On) of the STB6NB90?

The Rds On for the STB6NB90 is a maximum of 0.6 Ohms.

What type of gate does the STB6NB90 MOSFET have?

The STB6NB90 MOSFET features a Logic Level Gate.

What is the standard package quantity for the STB6NB90?

The standard package quantity for the STB6NB90 is 1000 pieces.

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