| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
420 pcs
|
420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The STB6NB90 is a discrete N-Channel MOSFET manufactured by STMicroelectronics. It is designed for power switching applications, offering a high breakdown voltage of 900V and a continuous drain current capability of 6A at 25°C.
Key electrical characteristics include a typical gate threshold voltage (Vgs(th)) of 4V at 1mA and a low on-state resistance (Rds On) of 0.6 Ohms maximum at 10V. The gate charge (Qg) is 50nC at 10V, indicating efficient switching performance. This MOSFET features a Logic Level Gate, making it suitable for direct interface with microcontrollers and low-voltage logic circuits.
The component is packaged in a standard quantity of 1000 pieces. Environmental compliance data indicates RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH unaffected status, though this data has low confidence and should be verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (V(br)ceo) of the STB6NB90 MOSFET is 900V.
The STB6NB90 MOSFET has a continuous drain current of 6A.
The Rds On for the STB6NB90 is a maximum of 0.6 Ohms.
The STB6NB90 MOSFET features a Logic Level Gate.
The standard package quantity for the STB6NB90 is 1000 pieces.