| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STB6N80K5 is an N-Channel MOSFET from STMicroelectronics designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 800V and a continuous drain current of 4.5A at case temperature.
Key electrical characteristics include a maximum on-resistance of 1.6 Ohm at 2A and 10V gate drive, a gate threshold voltage of 5V at 100µA, and a maximum gate charge of 7.5 nC. The device can dissipate up to 85W and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a D2PAK (TO-263) surface mount package, suitable for automated assembly. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The part is commonly used in power supply circuits, switching converters, and motor control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package.
-55°C to 150°C junction temperature.
7.5 nC at 10V.