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STB6N60M2 The STMicroelectronics STB6N60M2 is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and a 4.5A continuous drain current.
Mfr Part #:

STB6N60M2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB6N60M2 is an N-Channel MOSFET designed for power applications. It features a 600V drain-source voltage and a 4.5A continuous drain current.
✓ Total Stock: 600 pcs
$ Price Range: $2.56

STB6N60M2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
600 pcs
On Request
600 pcs On Request 1 On Request On Request 1513 On Request On Request
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STB6N60M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STB6N60M2 Description

Short technical summary and product information.

The STMicroelectronics STB6N60M2 is an N-Channel MOSFET belonging to the MDmesh™ II Plus series. It is designed for power switching applications and offers a drain-to-source voltage (Vdss) of 600V.

 

Key electrical characteristics include a continuous drain current (Id) of 4.5A at 25°C and a maximum on-resistance (Rds On) of 1.2 Ohm at 2.25A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-source voltage is ±25V. Input capacitance (Ciss) is rated at 232 pF at 100V.

 

This MOSFET has a maximum power dissipation of 60W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.

 

The component is listed with RoHS3 compliance, Moisture Sensitivity Level 1, and REACH Unaffected status, though these are noted as unverified in the database.

STB6N60M2 Quick Information

Product Type: MOSFET
Series: MDmesh™ II Plus
Canonical Name: STMicroelectronics STB6N60M2 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

STB6N60M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB6N60M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB6N60M2 Features

  • 600V drain-to-source voltage rating.
  • 4.5A continuous drain current.
  • 1.2 Ohm maximum on-resistance.
  • 8 nC maximum gate charge.
  • Surface mount D2PAK package.

STB6N60M2 Applications

  • Used in power supply circuits.
  • Suitable for DC-DC converters.
  • Ideal for switch mode power supplies.
  • Applicable in motor control circuits.

STB6N60M2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the STB6N60M2?

The drain-to-source voltage (Vdss) is 600 V.

What is the continuous drain current for the STB6N60M2?

The continuous drain current (Id) is 4.5A at 25°C.

What is the maximum on-resistance of the STB6N60M2?

The maximum on-resistance (Rds On) is 1.2 Ohm at 2.25A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STB6N60M2 available in?

It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface mounting.

What is the gate charge for the STB6N60M2?

The maximum gate charge (Qg) is 8 nC at 10V.

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