| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 723 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STB60NF10-1 is an N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 100V and can handle a continuous drain current of up to 80A at a case temperature (Tc).
This MOSFET has a maximum power dissipation of 300W (Tc) and a low on-resistance (Rds On) of 23mOhm at 40A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the gate-to-source voltage (Vgs) can be up to ±20V. Its input capacitance (Ciss) is 4270pF at 25V.
The device operates within a temperature range of -55°C to 175°C (TJ). It is constructed using MOSFET (Metal Oxide) technology and comes in a TO-262-3 Long Leads, I²Pak, TO-262AA package, suitable for through-hole mounting.
The STB60NF10-1 is RoHS3 compliant, has an MSL of 1 Unlimited, and is REACH unaffected. It is identified by the part number STB60NF10-1 from STMicroelectronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
TO-262-3 (I2PAK) through-hole package.
-55°C to 175°C junction temperature.
23mOhm maximum at 40A and 10V Vgs.
80A maximum at case temperature.
104nC maximum at 10V Vgs.
300W at case temperature.